V50100P document number 88929 01-dec-05 vishay general semiconductor www.vishay.com 1 pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 new product dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.372 v at i f = 5 a major ratings and characteristics i f(av) 2 x 25 a v rrm 100 v i fsm 250 a v f at i f = 20 a 0.64 v t j max. 150 c features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? solder dip 260 c, 40 seconds typical applications for use in high frequency inverters, switching power supplies, freewheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-247ad (to-3p) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum maximum ratings (t a = 25 c unless otherwise specified) parameter symbol V50100P unit maximum repetitive peak reverse voltage v rrm 100 v rms reverse voltage for sine wave v rms 70 v dc blocking voltage v r 100 v maximum average forward rectified current (see fig. 1) per device per leg i f(av) 50 25 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per leg i fsm 250 a peak repetitive reverse current per leg at t p = 2 s, 1 khz i rrm 1.0 a operating junction and storage temperature range t j , t stg - 20 to + 150 c
www.vishay.com 2 document number 88929 01-dec-05 V50100P vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise specified) thermal characteristics (t a = 25 c unless otherwise specified) notes: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol ty p. max. unit breakdown voltage at i r = 1.0 ma t j = 25 c v (br) 100 (minimum) - v instantaneous forward voltage (1) per leg at i f = 5 a i f = 10 a t j = 25 c v f 0.463 - v 0.535 - i f = 20 a 0.664 - i f = 25 a 0.700 0.78 i f = 5 a t j = 125 c 0.375 - i f = 10 a 0.445 - i f = 20 a 0.605 - i f = 25 a 0.635 0.70 reverse current at rated v rm (1) per leg at v r = 70 v t j = 25 c t j = 125 c i r 13.7 8.4 500 15 a ma at v r = 100 v t j = 25 c t j = 125 c 69.6 22.5 1000 45 a ma parameter symbol V50100P unit typical thermal resistance per leg r jc 1.5 c/w figure 1. forward current derating curve case temperat u re (c) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 a v erage for w ard c u rrent ( a) figure 2. maximum non-repetitive peak forward surge current 0 50 100 150 200 250 300 1 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
V50100P document number 88929 01-dec-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous fo rward characteristics per leg figure 4. typical reve rse characteristics instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0 0.2 0.4 0.6 0. 8 1 100 10 1 0.1 t j = 100 c t j = 150 c t j = 125 c t j = 25 c 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t j = 150 c t j = 125 c t j = 100 c t j = 25 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance 110 100 0.1 re v erse v oltage ( v ) j u nction capacitance (pf) 10000 1000 100 0.01 0.1 1 10 100 t, p u lse d u ration, sec 10 1 0.1 transient thermal impedance (c/ w ) pi n 1 pi n 3 case 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 ( 8 .2) 0.313 (7.9) 0.142 (3.6) 0.13 8 (3.5) 0.170 (4.3) 0.0 8 6 (2.1 8 ) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.04 8 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0. 8 40 (21.3) 0. 8 20 (20. 8 ) 1 2 3 0.07 8 ref (1.9 8 ) 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1ref. 0.11 8 (3.0) 0.10 8 (2.7) 0.030 (0.76) 0.020 (0.51) both sides pi n 2 to-247ad (to-3p)
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